SPW12N50C3

500V 11.6A N-Channel MOSFET TO-247 380mR RdsOn

N-Channel Power MOSFET, 500V breakdown voltage, 11.6A continuous drain current, and 380mΩ Rds On. Features include 125W power dissipation, 1.2nF input capacitance, and 10ns turn-on delay. Operates from -55°C to 150°C, with a 20V gate-source voltage rating. Packaged in TO-247AD with through-hole termination, this RoHS compliant component is ideal for high-power applications.

PackageTO-247-3

Current Rating11.6A

PolarityN-CHANNEL

Power125W

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Technical Specifications

Infineon SPW12N50C3 technical specifications.

General

Package/Case	TO-247-3
Continuous Drain Current (ID)	11.6A
Current Rating	11.6A
Drain to Source Breakdown Voltage	560V
Drain to Source Resistance	380mR
Dual Supply Voltage	560V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.2nF
Lead Free	Lead Free
Lead Pitch	5.45mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	125W
Nominal Vgs	3V
Package Quantity	240
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	125W
Rds On Max	380mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	CoolMOS™
Termination	Through Hole
Threshold Voltage	3V
Turn-Off Delay Time	45ns
Turn-On Delay Time	10ns
DC Rated Voltage	560V