N-Channel Power MOSFET, 500V DC rated voltage, 16A continuous drain current, and 0.28ohm Rds On Max. Features include a 160W maximum power dissipation, 1.6nF input capacitance, and 3V threshold voltage. This silicon, metal-oxide semiconductor FET is housed in a TO-247-3 plastic package, operating from -55°C to 150°C. It offers fast switching characteristics with a 10ns turn-on delay and 8ns fall time. RoHS compliant and lead-free.
PackageTO-247-3
Current Rating16A
Power160W
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Technical Specifications
Infineon SPW16N50C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW16N50C3 Datasheet
Download the complete datasheet for Infineon SPW16N50C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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