N-Channel Power MOSFET, 600V Vdss, 20.7A continuous drain current, and 0.19 ohm Rds On. Features a TO-247 package for through-hole mounting, 208W power dissipation, and a maximum operating temperature of 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 4.5ns fall time. This silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-247
MountingThrough Hole
Power208W
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Technical Specifications
Infineon SPW20N60C3FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW20N60C3FKSA1 Datasheet
Download the complete datasheet for Infineon SPW20N60C3FKSA1 to view detailed technical specifications.
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