N-Channel Power MOSFET, 600V breakdown voltage, 20.7A continuous drain current, and 220mΩ on-state resistance. Features include a 2.4nF input capacitance, 6.4ns fall time, 12ns turn-on delay, and 59ns turn-off delay. Maximum power dissipation is 208W with an operating temperature range of -55°C to 150°C. Packaged in a TO-247-3 plastic housing, this RoHS compliant component is suitable for high-power applications.
Infineon SPW20N60CFDFKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current Rating | 20.7A |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Number of Elements | 1 |
| On-State Resistance | 220mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPW20N60CFDFKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
