N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 190mΩ at a 10V gate-source voltage. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 208W. Packaged in a TO-247-3 plastic housing, this component is RoHS compliant.
PackageTO-247-3
Current Rating21A
PolarityN-CHANNEL
Power208W
Quick Jump:
Technical Specifications
Infineon SPW21N50C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 560V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 16.03mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW21N50C3 Datasheet
Download the complete datasheet for Infineon SPW21N50C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
