N-channel power MOSFET featuring 560V drain-to-source voltage and 32A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.11 ohm Rds On resistance and a maximum power dissipation of 284W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 20ns turn-on delay and 10ns fall time. Packaged in a TO-247-3 configuration, this RoHS compliant component is ideal for high-power applications.
PackageTO-247-3
Voltage560V
Current32A
Current Rating32A
Quick Jump:
Technical Specifications
Infineon SPW32N50C3FKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Current | 32A |
| Current Rating | 32A |
| Drain to Source Voltage (Vdss) | 560V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 284W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 20ns |
| Voltage | 560V |
| DC Rated Voltage | 560V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW32N50C3FKSA1 Datasheet
Download the complete datasheet for Infineon SPW32N50C3FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.