N-Channel Power MOSFET featuring 600V drain-to-source voltage and 34.1A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 118mΩ at a 10V gate-source voltage. Designed for high power applications, it boasts a maximum power dissipation of 313W and operates within a temperature range of -55°C to 150°C. The component is housed in a TO-247-3 package, with fast switching characteristics including a 20ns turn-on delay and 12ns fall time.
PackageTO-247-3
Voltage600V
Current34A
Current Rating34A
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Technical Specifications
Infineon SPW35N60CFD technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 34.1A |
| Current | 34A |
| Current Rating | 34A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 5.06nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 313W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 118mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 20ns |
| Voltage | 600V |
| DC Rated Voltage | 600V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW35N60CFD Datasheet
Download the complete datasheet for Infineon SPW35N60CFD to view detailed technical specifications.
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