N-Channel Power MOSFET featuring 600V drain-source voltage and 46A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 83mΩ at a gate-source voltage of 20V. Designed for high power applications with a maximum power dissipation of 417W, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-247-3 package and exhibits fast switching characteristics with a fall time of 15ns.
PackageTO-247-3
Current Rating46A
Power417W
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Technical Specifications
Infineon SPW47N60CFD technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
46A
Current Rating
46A
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
21.1mm
Input Capacitance
7.7nF
Lead Free
Lead Free
Length
16.13mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
417W
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
417W
Radiation Hardening
No
Rds On Max
83mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
100ns
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Width
5.21mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPW47N60CFD Datasheet
Download the complete datasheet for Infineon SPW47N60CFD to view detailed technical specifications.
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