N-Channel Power MOSFET featuring 600V drain-source voltage and 46A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 83mΩ at a gate-source voltage of 20V. Designed for high power applications with a maximum power dissipation of 417W, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-247-3 package and exhibits fast switching characteristics with a fall time of 15ns.
PackageTO-247-3
Current Rating46A
Power417W
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Technical Specifications
Infineon SPW47N60CFD technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 46A |
| Current Rating | 46A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 7.7nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 83mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW47N60CFD Datasheet
Download the complete datasheet for Infineon SPW47N60CFD to view detailed technical specifications.
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