SPW52N50C3

N-channel power MOSFET featuring 500V drain-source voltage and 52A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 70mΩ at a gate-source voltage of 10V. With a maximum power dissipation of 417W and operating temperatures from -55°C to 150°C, it is housed in a TO-247-3 plastic package. Key switching characteristics include a 20ns turn-on delay and 120ns turn-off delay, with a 10ns fall time.