Integrated Silicon Solution
IS43DR86400B-3DBLI-TR
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TMO-207, TWBGA-60
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TMO-207, TWBGA-60
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Technical Specifications
Integrated Silicon Solution IS43DR86400B-3DBLI-TR technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 60 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B60 |
| Width | 10 |
| Length | 10.5 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Current-Max | 0.22 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.008 |
| Access Time-Max | 0.45 |
| Clock Frequency-Max (fCLK) | 333 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Integrated Silicon Solution IS43DR86400B-3DBLI-TR Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR86400B-3DBLI-TR to view detailed technical specifications.
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