Integrated Silicon Solution
IS43DR86400E-25DBLI
DDR DRAM IC 1.7V-1.9V 1.8V Nominal 0.4ns Access Time TFBGA-60
This DDR DRAM IC operates within a temperature range of -40°C to 85°C and is supplied with a nominal voltage of 1.8V. The device features a maximum access time of 0.4ns and is packaged in a TFBGA-60 configuration. The IC is designed for industrial applications and has a memory capacity of 64 megabytes.
Quick Jump:
Technical Specifications
Integrated Silicon Solution IS43DR86400E-25DBLI technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 60 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B60 |
| Width | 8 |
| Length | 10.5 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Access Time-Max | 0.4 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Integrated Silicon Solution IS43DR86400E-25DBLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR86400E-25DBLI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.