DDR DRAM memory IC with 64M x 8 configuration, offering a maximum access time of 0.45ns. This component operates within an industrial temperature range of -40°C to 85°C and features a 60-terminal PBGA package. It supports a nominal supply voltage of 1.8V, with a maximum of 1.9V and a minimum of 1.7V. The device is designed with CMOS technology and a single port for data access.
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Technical Specifications
Integrated Silicon Solution IS43DR86400E-3DBLI technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 60 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B60 |
| Width | 8 |
| Length | 10.5 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Access Time-Max | 0.45 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Integrated Silicon Solution IS43DR86400E-3DBLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR86400E-3DBLI to view detailed technical specifications.
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