DDR DRAM memory IC with 64M x 8 configuration, offering a maximum access time of 0.45ns. This component operates within an industrial temperature range of -40°C to 85°C and features a 60-terminal PBGA package. It supports a nominal supply voltage of 1.8V, with a maximum of 1.9V and a minimum of 1.7V. The device is designed with CMOS technology and a single port for data access.
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Technical Specifications
Integrated Silicon Solution IS43DR86400E-3DBLI technical specifications.
General
Max Operating Temperature
85
Number of Terminals
60
Min Operating Temperature
-40
Terminal Position
BOTTOM
JEDEC Package Code
R-PBGA-B60
Width
8
Length
10.5
Number of Functions
1
Temperature Grade
INDUSTRIAL
Supply Voltage-Nom (Vsup)
1.8
Supply Voltage-Max (Vsup)
1.9
Supply Voltage-Min (Vsup)
1.7
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Number of Ports
1
Access Time-Max
0.45
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Integrated Silicon Solution IS43DR86400E-3DBLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS43DR86400E-3DBLI to view detailed technical specifications.
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