Integrated Silicon Solution
IS61LPS25636A-200TQLI
256Kx36 Cache SRAM, 200MHz, 3.1ns, 3.3V, 100-Pin TQFP
256K x 36 Cache SRAM, operating at a maximum clock frequency of 200 MHz with a maximum access time of 3.1 ns. This parallel memory IC features a 3.3V nominal supply voltage, with a range of 3.135V to 3.465V. Designed for industrial temperature grades, it operates from -40°C to 85°C. The component is housed in a 100-terminal, quad-positioned PQFP package with a JEDEC code of R-PQFP-G100.
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Technical Specifications
Integrated Silicon Solution IS61LPS25636A-200TQLI technical specifications.
General
Max Operating Temperature
85
Number of Terminals
100
Min Operating Temperature
-40
Terminal Position
QUAD
JEDEC Package Code
R-PQFP-G100
Width
14
Length
20
Pin Count
100
Number of Functions
1
Temperature Grade
INDUSTRIAL
Supply Voltage-Nom (Vsup)
3.3
Supply Voltage-Max (Vsup)
3.465
Supply Voltage-Min (Vsup)
3.135
Supply Current-Max
0.275
Number of Words
262144
Number of Words Code
256000
Memory IC Type
CACHE SRAM
Parallel/Serial
PARALLEL
Standby Current-Max
0.105
Access Time-Max
3.1
Clock Frequency-Max (fCLK)
200
I/O Type
COMMON
Compliance
RoHS
Yes
Eccn Code
3A991.B.2.A
Lead Free
Yes
HTS Code
8542.32.00.41
REACH
Compliant
Military Spec
False
Datasheet
Integrated Silicon Solution IS61LPS25636A-200TQLI Datasheet
Download the complete datasheet for Integrated Silicon Solution IS61LPS25636A-200TQLI to view detailed technical specifications.
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