256K x 36 Cache SRAM, operating at a maximum clock frequency of 200 MHz with a maximum access time of 3.1 ns. This parallel memory IC features a 3.3V nominal supply voltage, with a range of 3.135V to 3.465V. Designed for industrial temperature grades, it operates from -40°C to 85°C. The component is housed in a 100-terminal, quad-positioned PQFP package with a JEDEC code of R-PQFP-G100.
Integrated Silicon Solution IS61LPS25636A-200TQLI technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 100 |
| Min Operating Temperature | -40 |
| Terminal Position | QUAD |
| JEDEC Package Code | R-PQFP-G100 |
| Width | 14 |
| Length | 20 |
| Pin Count | 100 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.465 |
| Supply Voltage-Min (Vsup) | 3.135 |
| Supply Current-Max | 0.275 |
| Number of Words | 262144 |
| Number of Words Code | 256000 |
| Memory IC Type | CACHE SRAM |
| Parallel/Serial | PARALLEL |
| Standby Current-Max | 0.105 |
| Access Time-Max | 3.1 |
| Clock Frequency-Max (fCLK) | 200 |
| I/O Type | COMMON |
| RoHS | Yes |
| Eccn Code | 3A991.B.2.A |
| Lead Free | Yes |
| HTS Code | 8542.32.00.41 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Integrated Silicon Solution IS61LPS25636A-200TQLI to view detailed technical specifications.
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