The 2N6796 is a single-element power MOSFET from International Rectifier with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 32A. The device is packaged in a TO-39 case and is designed for through-hole mounting. The 2N6796 has a maximum power dissipation of 25W and a nominal Vgs of 4V.
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International Rectifier 2N6796 technical specifications.
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier 2N6796 to view detailed technical specifications.
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