The AUIRF7341QTR is a dual N-channel HEXFET power MOSFET from International Rectifier. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device has a maximum power dissipation of 2.4W and is RoHS compliant. It is available in a SOIC package, suitable for surface mount applications.
International Rectifier AUIRF7341QTR technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Dual |
| Fall Time | 12.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 780pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 9.2ns |
| RoHS | Compliant |
No datasheet is available for this part.
