MOSFET MOSFT 20V 4.2A 85mOhm 5nC
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International Rectifier IRF1902GTRPBF technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 310pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 85mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5.9ns |
| Width | 4mm |
| RoHS | Compliant |
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