International Rectifier
IRF5803D2PBF
Infineon IRF5803D2PBF P-channel MOSFET Transistor, 3.4 A, 40 V, 8-Pin SOIC
PackageSOIC
Current Rating-3.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF5803D2PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.4A
Current Rating
-3.4A
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
40V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.11nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
112mR
RoHS Compliant
Yes
Series
FETKY™
Turn-Off Delay Time
88ns
Turn-On Delay Time
43ns
DC Rated Voltage
-40V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5803D2PBF Datasheet
Download the complete datasheet for International Rectifier IRF5803D2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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