Infineon IRF5803D2PBF P-channel MOSFET Transistor, 3.4 A, 40 V, 8-Pin SOIC
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International Rectifier IRF5803D2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.11nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 112mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 43ns |
| DC Rated Voltage | -40V |
| Width | 4mm |
| RoHS | Compliant |
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