20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package
International Rectifier IRF5852TR technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 400pF |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
No datasheet is available for this part.
