The IRF6609TR1 is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum drain to source breakdown voltage of 20V and a maximum power dissipation of 1.8W. The device is RoHS compliant and has a nominal threshold voltage of 2.45V.
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International Rectifier IRF6609TR1 technical specifications.
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.29nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.45V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 32ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.45V |
| Turn-Off Delay Time | 26ns |
| Width | 5.05mm |
| RoHS | Compliant |
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