The IRF6609TR1PBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature range of -40°C to 150°C. It has a maximum power dissipation of 1.8W and a continuous drain current of 31A. The device is RoHS compliant and has a nominal Vgs of 2.45V. It features a threshold voltage of 1.55V and turn-on and turn-off delay times of 24ns and 26ns, respectively.
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International Rectifier IRF6609TR1PBF technical specifications.
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2MR |
| Dual Supply Voltage | 20V |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 6.29nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.45V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.55V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 24ns |
| Width | 5.05mm |
| RoHS | Compliant |
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