MOSFET, N, DIRECTFET, ST
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International Rectifier IRF6614TR1 technical specifications.
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 8.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.56nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 8.3mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 15ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 18ns |
| Width | 3.95mm |
| RoHS | Compliant |
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