The IRF6626TR1PBF is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 42W and a continuous drain current of 16A. The device is RoHS compliant and has a nominal Vgs of 2.35V. It features a drain to source breakdown voltage of 30V and a drain to source resistance of 7.1mR.
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
Quick Jump:
Technical Specifications
International Rectifier IRF6626TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.4MR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.38nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 2.35V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 5.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
Product Images
