The IRF6644TR1PBF is a single N-channel HEXFET power MOSFET with a maximum operating temperature range of -40°C to 150°C. It has a maximum power dissipation of 2.8W and a nominal Vgs of 2.8V. The device is RoHS compliant and features a surface mount package with a height of 0.6mm and a width of 5.05mm. It has a maximum drain to source breakdown voltage of 100V and a maximum drain to source resistance of 13mR.
Current Rating10.3A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6644TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 10.3A |
| Current Rating | 10.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 13MR |
| Dual Supply Voltage | 100V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 2.21nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 100V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6644TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6644TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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