International Rectifier IRF6645 N-channel MOSFET Transistor, 5.7 A, 100 V, 7-pin DirectFET SJ
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International Rectifier IRF6645 technical specifications.
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.41mm |
| Input Capacitance | 890pF |
| Length | 3.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 9.2ns |
| Width | 3.95mm |
| RoHS | Not CompliantNo |
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