International Rectifier
IRF6645
International Rectifier IRF6645 N-channel MOSFET Transistor, 5.7 A, 100 V, 7-pin DirectFET SJ
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
International Rectifier IRF6645 technical specifications.
General
Continuous Drain Current (ID)
5.7A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
5.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.41mm
Input Capacitance
890pF
Length
3.95mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
35mR
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
9.2ns
Width
3.95mm
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF6645 Datasheet
Download the complete datasheet for International Rectifier IRF6645 to view detailed technical specifications.
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