MOSFET, N, DIRECTFET, SH
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International Rectifier IRF6655TR1 technical specifications.
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 530pF |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 4.8V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 31ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Width | 3.95mm |
| RoHS | Compliant |
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