International Rectifier
IRF6655TR1PBF
Infineon IRF6655TR1PBF N-channel MOSFET Transistor, 4.2 A, 100 V, 6-Pin DirectFET SH
MountingSurface Mount
PolarityN-CHANNEL
Power42W
Quick Jump:
Technical Specifications
International Rectifier IRF6655TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 62MR |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.7mm |
| Input Capacitance | 530pF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6655TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6655TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.