International Rectifier IRF6665 N-channel MOSFET Transistor, 4.2 A, 100 V, 6-pin DirectFET SH
International Rectifier IRF6665 technical specifications.
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.7mm |
| Input Capacitance | 530pF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 62mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| Width | 3.95mm |
| RoHS | Compliant |
No datasheet is available for this part.
