Trans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R
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International Rectifier IRF6665TR1 technical specifications.
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 530pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| RoHS | Not CompliantNo |
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