International Rectifier
IRF6678TR1PBF
INTERNATIONAL RECTIFIER IRF6678TR1PBF MOSFET Transistor, N Channel, 30 A, 30 V, 1.7 mohm, 10 V, 1.35 V
INTERNATIONAL RECTIFIER IRF6678TR1PBF MOSFET Transistor, N Channel, 30 A, 30 V, 1.7 mohm, 10 V, 1.35 V
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6678TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.2MR |
| Dual Supply Voltage | 30V |
| Fall Time | 8.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 5.64nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.35V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.35V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 21ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6678TR1PBF Datasheet
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