International Rectifier
IRF6678TR1PBF
INTERNATIONAL RECTIFIER IRF6678TR1PBF MOSFET Transistor, N Channel, 30 A, 30 V, 1.7 mohm, 10 V, 1.35 V
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6678TR1PBF technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.2MR
Dual Supply Voltage
30V
Fall Time
8.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
5.64nF
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.35V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
2.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.35V
Turn-Off Delay Time
27ns
Turn-On Delay Time
21ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6678TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6678TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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