The IRF6706S2TR1PBF is a surface mount N-CHANNEL HEXFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.8W and a drain to source breakdown voltage of 25V. The device features a drain to source resistance of 6.5mR and a gate to source voltage of 20V. It is RoHS compliant and available in a tape and reel packaging with 1000 units per package.
MountingSurface Mount
PolarityN-CHANNEL
Power26W
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Technical Specifications
International Rectifier IRF6706S2TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 6.5MR |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.57mm |
| Input Capacitance | 1.81nF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 26W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.9ns |
| Turn-On Delay Time | 12ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6706S2TR1PBF Datasheet
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