MOSFET; Power; X0.9 CONTROLFET IN S1 Outline .
International Rectifier IRF6706S2TRPBF technical specifications.
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.57mm |
| Input Capacitance | 1.81nF |
| Length | 4.85mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 26W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| Resistance | 0.0038R |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.9ns |
| Turn-On Delay Time | 12ns |
| Width | 3.95mm |
| RoHS | Compliant |
No datasheet is available for this part.
