International Rectifier
IRF6709S2TR1PBF
INTERNATIONAL RECTIFIER IRF6709S2TR1PBF MOSFET Transistor, N Channel, 12 A, 25 V, 5.9 mohm, 10 V, 1.8 V
PackageS
MountingSurface Mount
PolarityN-CHANNEL
Power21W
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Technical Specifications
International Rectifier IRF6709S2TR1PBF technical specifications.
General
Package/Case
S
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
7.8MR
Dual Supply Voltage
25V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.66mm
Input Capacitance
1.01nF
Lead Free
Lead Free
Length
3.95mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
21W
Radiation Hardening
No
Rds On Max
7.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.8V
Turn-Off Delay Time
9.1ns
Turn-On Delay Time
8.4ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6709S2TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6709S2TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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