
The IRF6725MTR1PBF is a single HEXFET power MOSFET from International Rectifier with a maximum drain current of 28A and a maximum drain-source voltage of 30V. It features a maximum on-resistance of 2.2 milliohms and a nominal gate-source voltage of 1.8V. The device is designed for surface mount applications and has a maximum power dissipation of 2.8W. It operates over a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
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International Rectifier IRF6725MTR1PBF technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.2MR |
| Dual Supply Voltage | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 16ns |
| Width | 5.05mm |
| RoHS | Compliant |
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