
The IRF7101TRPBF is a 2 N-Channel HEXFET power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 3.5A and a drain to source voltage rating of 20V. The device is packaged in a SOIC package and is lead free and RoHS compliant. It has an input capacitance of 320pF and a maximum power dissipation of 2W.
International Rectifier IRF7101TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100mR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7101TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
