PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7220GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -14V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 14V |
| Fall Time | 1040ns |
| Input Capacitance | 8.075nF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 12mR |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7220GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7220GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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