The IRF7341QTRPBF is a 2 N-Channel HEXFET FET from International Rectifier, featuring a maximum drain to source voltage of 55V and continuous drain current of 5.1A. It has a maximum power dissipation of 2.4W and is packaged in a surface mount SOIC package. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageSOIC
MountingSurface Mount
Power2.4W
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Technical Specifications
International Rectifier IRF7341QTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 55V |
| FET Type | 2 N-Channel |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7341QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7341QTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.