The IRF7350PBF is a dual-channel FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 1.5A. The device has a fall time of 40ns and a turn-off delay time of 30ns. It is packaged in a SOIC package and is suitable for surface mount applications. The IRF7350PBF is RoHS compliant and is part of the HEXFET series.
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International Rectifier IRF7350PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 40ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 380pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| On-State Resistance | 210mR |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Rds On Max | 210mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 30ns |
| Width | 4mm |
| RoHS | Compliant |
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