PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF7350PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
1.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
100V
Dual Supply Voltage
100V
Fall Time
40ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
380pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
4V
On-State Resistance
210mR
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
N
Power Dissipation
2W
Rds On Max
210mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
30ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7350PBF Datasheet
Download the complete datasheet for International Rectifier IRF7350PBF to view detailed technical specifications.
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