The IRF7379TRPBF is a dual N and P-channel FET from International Rectifier. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is RoHS compliant and features a maximum power dissipation of 2.5W. It is available in a SOIC package and is suitable for surface mount applications.
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International Rectifier IRF7379TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7379TRPBF to view detailed technical specifications.
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