The IRF7413GTRPBF is a surface mount N-CHANNEL HEXFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 13A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 11mR and a maximum power dissipation of 2.5W. It is packaged in a SOIC case and is suitable for surface mount applications.
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International Rectifier IRF7413GTRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.8nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 8.6ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7413GTRPBF to view detailed technical specifications.
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