The IRF7488PBF is a dual N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6.3A and a drain to source breakdown voltage of 80V. The device is packaged in a SOIC package and is RoHS compliant. It has a maximum power dissipation of 2.5W and a nominal Vgs of 4V.
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International Rectifier IRF7488PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.3A |
| Current Rating | 6.3A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Voltage (Vdss) | 80V |
| Dual Supply Voltage | 80V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 80V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
