The IRF7492PBF is a surface mount N-CHANNEL HEXFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 200V and a drain to source on resistance of 79mΩ. The device is packaged in a SOIC package and is lead free. It is RoHS compliant and has a maximum power dissipation of 2.5W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Rectifier IRF7492PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7492PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 79MR |
| Dual Supply Voltage | 200V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 79mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 15ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7492PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
