The IRF7601TRPBF is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.7A and a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 35mR and a gate to source voltage of 12V. It is packaged in an MSOP package and is RoHS compliant.
International Rectifier IRF7601TRPBF technical specifications.
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.86mm |
| Input Capacitance | 650pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 5.1ns |
| Width | 3mm |
| RoHS | Compliant |
No datasheet is available for this part.
