International Rectifier
IRF7601TRPBF
INTERNATIONAL RECTIFIER IRF7601PBF MOSFET Transistor, N Channel, 5.7 A, 20 V, 35 mohm, 4.5 V, 700 mV
PackageMSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
International Rectifier IRF7601TRPBF technical specifications.
General
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.86mm |
| Input Capacitance | 650pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 5.1ns |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7601TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7601TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.