The IRF7751GTRPBF is a P-channel HEXFET power MOSFET with a maximum drain current of 4.5A and a breakdown voltage of -30V. It has a maximum power dissipation of 1W and an on-resistance of 35mR. This device is packaged in a TSSOP case and is designed for surface mount applications. The IRF7751GTRPBF is compliant with RoHS regulations and is available in a tape and reel packaging format.
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International Rectifier IRF7751GTRPBF technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.464nF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7751GTRPBF to view detailed technical specifications.
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