The IRF7752GTRPBF is a 2 N-Channel HEXFET from International Rectifier with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 30V and a continuous drain current of 4.6A. The device is packaged in a TSSOP package and is mounted via surface mount. It is RoHS compliant and has a maximum power dissipation of 1W.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7752GTRPBF technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 861pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7752GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7752GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.