
International Rectifier IRF7752GTRPBF technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 861pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7752GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.