The IRF7755GTRPBF is a P-channel HEXFET power MOSFET from International Rectifier. It features a TSSOP package and is designed for surface mount applications. The device has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 1W. It is RoHS compliant and has a maximum drain to source breakdown voltage of -20V.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7755GTRPBF technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | -3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.09nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 51mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7755GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7755GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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