The IRF7757TRPBF is a 2 N-Channel HEXFET power MOSFET from International Rectifier, packaged in a TSSOP surface mount package. It has a maximum operating temperature range of -55°C to 150°C and is RoHS compliant. The device has a maximum power dissipation of 1.2W and a continuous drain current of 4.8A. The IRF7757TRPBF has a drain to source breakdown voltage of 20V and a drain to source resistance of 35mR.
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International Rectifier IRF7757TRPBF technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 14ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.34nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.2W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 9.5ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7757TRPBF to view detailed technical specifications.
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