The IRF7807APBF is a 30V N-channel HEXFET MOSFET with a continuous drain current rating of 8.3A. It features a drain to source breakdown voltage of 30V and a maximum power dissipation of 2.5W. The device is packaged in a surface mount SOIC package and is RoHS compliant. Operating temperature range is -55°C to 150°C.
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International Rectifier IRF7807APBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
