The IRF7807D2PBF is a surface mount N-CHANNEL FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 8.3A. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 25mR. It is packaged in a SOIC package and is RoHS compliant.
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International Rectifier IRF7807D2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Width | 4mm |
| RoHS | Compliant |
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