International Rectifier
IRF7807D2PBF
Infineon IRF7807D2PBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7807D2PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FETKY™
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807D2PBF Datasheet
Download the complete datasheet for International Rectifier IRF7807D2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.