MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 3.6Milliohms; ID 19A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier IRF7834PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 3.71nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 13.7ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
