International Rectifier
IRF7854PBF
INTERNATIONAL RECTIFIER IRF7854PBF MOSFET Transistor, N Channel, 10 A, 80 V, 13.4 mohm, 10 V, 4.9 V
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7854PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
80V
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
13.4MR
Dual Supply Voltage
80V
Fall Time
8.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.62nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
2.5A
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
4.9V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
13.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
4.9V
Turn-Off Delay Time
15ns
Turn-On Delay Time
9.4ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7854PBF Datasheet
Download the complete datasheet for International Rectifier IRF7854PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.